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born:
place:
Pre-doctorate education: BS in Mathematics and Physics,
1991, Tougaloo College; MS in Physics, 1995, Stanford
University
Doctorate: Ph.D. in Physics, Stanford University 1999
Area:
Current Employment: Assistant Professor of Physics. University
of Alabama in Huntsvill
email: HMOluseyi@lbl.gov
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Hakeem M. Oluseyi
(née J. E. Plummer)
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BRIEF BIO
Dr. Hakeem M. Oluseyi is an astrophysicist,
educator, and inventor. He received his B.S. degrees in Math and
in Physics from Tougaloo College and M.S. and Ph.D. degrees in
Physics from Stanford University. His post-doctoral work was performed
at Applied Materials, Inc. and Lawrence Berkeley National Laboratory.
He is currently an Assistant Professor of Physics at the University
of Alabama in Huntsville and an Astrophysicist at NASA Marshall
Space Flight Center.
Dr. Oluseyi's research has focused on the development
of instrumentation for space-based astronomical observation including
optics, detectors, and electronics, and on the analysis of terrestrial
and astronomical plasmas including semiconductor manufacturing
plasmas, solar/stellar atmospheres and supernovae. He is the author
or co-author of over 40 scientific publications, holds eight patents,
and has received several fellowships, honors and awards.
As an educator Dr. Oluseyi has taught a diversity
of students from Stanford University, Foothill College, Kaplan
Test Prep Center, and the University of Alabama. He has supervised
the research activities of eleven students, six of whom were women
and seven of whom were from underrepresented minority groups.
Dr. Oluseyi has also traveled regularly to South and East Africa
as a member of Cosmos Education to teach K-12 students as well
as to train young educators. At home, Dr. Oluseyi is equally committed
to educational and public outreach. He is a sought after scientific
and motivational speaker and regularly makes appearances around
the country to professional, student, and lay audiences.
Currently, Dr. Oluseyi is a member of the SuperNova/Acceleration
Probe (SNAP) science team. SNAP is a proposed 2-meter space telescope
designed to map out the expansion history of the universe utilizing
Type Ia supernovae as standard candles, and elucidate the nature
of the dark energy that accelerates the universe's expansion.
Dr. Oluseyi is currently developing visible and near infrared
CCD detectors that are designed for deployment on SNAP. His recent
research has focused on taking the detector program from a research
mode to the delivery of precision robust reliable devices. This
work has recently resulted in the deployment of the novel CCD
technology as a detector in the SuperNova Intergral Field Spectrograph
(SNIFS), a part of the Nearby Supernova Factory. Additionally,
Dr. Oluseyi is also studying the atmospheres of the Sun and sun-like
stars.
PROFESSIONAL APPOINTMENTS
01/04 present Assistant Professor of Physics, University
of Alabama, Huntsville, AL
Astrophysicist, NASA Marshall Space Flight Center
11/01 12/03 Astrophysics Postdoctoral Fellow, Lawrence Berkeley
National Laboratory, Berkeley, CA
07/99 09/01 Senior Process Engineer, Applied Materials,
Inc., Sunnyvale, CA
09/98 01/02 Assistant Professor of Astronomy, Foothill College,
Los Altos Hills, CA
09/93 07/99 Graduate Research and Teaching Assistant, Stanford
University, Stanford, CA
Dr. Hakeem M. Oluseyi has won many awards.
A list can be obtained from him.
Research Interests
Current Technology Development: High resistivity
p-Channel CCDs, scientific payload development
Current Areas of Investigation: cosmology, solar/stellar atmospheres
Past Technology Development: EUV/soft x-ray
multilayer mirrors, thin foil filters, delta-doped CCDs, 300mm
plasma etcher
Past Areas of Investigation: Solar/stellar atmospheres, plasma
etching, in-situ spectroscopic process diagnostics and control
for plasma-based semiconductor manufacturing
ASTROPHYSICS PUBLICATIONS
1. "On the Inability of Coronal Funnels to Account for the
Solar Upper Transition Region," Oluseyi, H. M. and Carpio,
M.,
ApJ, to be submitted, 2004.
2. "The Structure of the Solar Transition Region," Oluseyi,
H. M. and Sheung, J., ApJ, to be submitted, 2004.
3. "Weak Lensing from Space I: Instrumentation and Survey
Strategy," with Rhodes et al., Astropart. Phys., 20,
2004.
4. "Wide-Field Surveys from the SNAP Mission," with
A. Kim et al., Proc. SPIE, 4836, 2002.
5. "Arthur B. C. Walker, II: Scholar, Warrior, Citizen,"
H. M. Oluseyi, NSBP Newsletter and
(http://www.math.buffalo.edu/mad/physics/walker_arthurbc.html#Scholar,
Warrior, Citizen), 2001.
6. "Development of a Global Model of the Solar Atmosphere
with an Emphasis on the Solar Transition Region,"
Oluseyi, H. M., Ph.D. Thesis, Stanford University, 2000.
7. "Observation and Modeling of the Solar Transition Region:
II. Identification of New Classes of Quasi-Static Loop
Model Solutions," Oluseyi, H. M. et al., ApJ, 527,
992, 1999.
8. "Observation and Modeling of the Solar Transition Region:
I. Multi-Spectral Solar Telescope Array Observations,"
Oluseyi, H. M.; Walker, II, A. B. C.; Porter, J.; Hoover, R. B.
and Barbee T. W., ApJ, 524, 1105, 1999.
9. "Chromospheric and Coronal Structure of Polar Plumes:
I. Magnetic Structure and Radiative Energy Balance,"
Allen, M. J.; Oluseyi, H. M.; Walker, II, A. B. C.; Hoover, R.
B. and Barbee, T. W., Sol. Phys., 174, 367, 1997.
10. "The Structure of the Solar Chromosphere: The Interpretation
of Multilayer Images," Walker, II, A. B. C.; Plummer ,
J. E. and Martínez-Galarce, D. S., Proc. SPIE, 2805,
345, 1996.
ASTROPHYSICS INSTRUMENTATION PUBLICATIONS
- "Characterization and Deployment of
Large Format Back-Illuminated Fully Depleted p-Channel CCDs for
Precision Astronomy," Oluseyi, H.M., et al., Proc. SPIE,
to be submitted, 2004.
- "SNAP Telescope: an update," with
Lampton, M., et al., Proc. SPIE 5166, 2004.
- "LBNL 4-Side Buttable CCD Packaging
Development," Oluseyi, H. M., et al., Proc. SPIE,
5301, 2004.
- "Fully Depleted Back-Illuminated p-Channel
CCD Development," with Bebek, C. J., et al., Proc. SPIE,
5167, 2004.
- "SNAP Satellite Focal Plane Development,"
with Bebek, C. J., et al., Proc. SPIE, 5164, 2003.
- "The SNAP Focal Plane," with Lampton,
M., et al., Proc. SPIE, 4854, 2003.
- "SNAP NIR Detectors," with G. Tarlé
et al., Proc. SPIE, 4850, 2003.
- "SNAP: An Integral Field Spectrograph
for Supernova Identification," with Ealet, A. et al., Proc.
SPIE, 4850, 2003.
- 9. "SNAP CCD Development Progress,"
Oluseyi, H. M., et al., Bull. Amer. Astro. Soc., 34,
no. 4, 2002.
- "The SNAP Telescope," with Lampton
et al., Proc. SPIE, 4849, 2002.
- "Overview of the SuperNova/Acceleration
Probe (SNAP)," with G. Aldering et al., Proc. SPIE,
4835, 2002.
- "Ultrastable and Uniform EUV and UV
Detectors," Nikzad, S.; Jones, T. J.; Elliott, S. T.; Cunningham,
T. J.; Deelman, P. W.; Walker, A. B. C. and Oluseyi, H. M., Proc.
SPIE, 4139, 250, 2000.
- "Multi-Spectral Solar Telescope Array
VIII: the second flight," Walker, A.B.C., et al., Proc.
SPIE, 2515, 182, 1995.
- "The Design and Performance of Thin
Foil Filters for the Multi-Spectral Solar Telescope Array II,"
Plummer1, J. E.; DeForest, C. E., et al., Proc. SPIE,
2515, 565, 1995.
- "Calibration of Multilayer Mirrors for
the Multi-Spectral Solar Telescope Array," Kankelborg, C.
C., Plummer1, J. E., et al., Proc. SPIE, 2515,
463, 1995.
- "Astronomical Observations with Normal
Incidence Multilayer Optics IV: Selection of Spectral Lines,"
Walker, Jr., A. B. C.; Plummer1, J. E.; Hoover, R. B. and Barbee
T. W., Proc. SPIE, 2279, 343, 1994.
- "Astronomical Observations with Normal
Incidence Multilayer Optics III: selection of multilayer bandpasses,"
Walker, Jr.; A. B. C.; Jackson, L.; Plummer1, J. E. and Hoover
R. B., Proc. SPIE, 2011, 450, 1993.
- "Performance of Multilayer Coated Mirrors
for the Multi-Spectral Solar Telescope Array," with Allen,
M. J., et al., Proc. SPIE, 2011, 381, 1993.
NANOTECHNOLOGY PATENTS
- 1. "A Method and Apparatus Employing
Optical Emission Spectroscopy to Detect a Fault in Process Conditions
of a Semiconductor System," H. M. Oluseyi & M. Sarfaty,
November 21, 2000, U.S. Patent 6,603,538, 21 claims, 2003.
- "Monitoring of Film Characteristics
during Plasma-Based Semiconductor Processing Using Optical Emission
Spectroscopy," H. M. Oluseyi & M. Sarfaty, November
7, 2000, U.S. Patent 6,633,391, 20 claims, 2003.
- "Method of Etching Tungsten or Tungsten
Nitride in Semiconductor Structures," P. Nallan & H.
M. Oluseyi, May 7, 2002, U.S. Patent 6,579,806, 18 claims, 2003.
- "Method of Etching Tungsten or Tungsten
Nitride Electrode Gates in Semiconductor Structures CIP,"
P. Nallan & H. M. Oluseyi, January 5, 2001, U.S. Patent 6,440,870,
61 claims, 2002.
- "Method of Etching Tungsten or Tungsten
Nitride Electrode Gates in Semiconductor Structures," P.
Nallan & H. M. Oluseyi, July 12, 2000, U.S. Patent 6,423,644,
44 claims, 2002; European Application 01952923.9-2203.
- "System, Method and Medium for Modeling,
Monitoring and/or Controlling Plasma Based Semiconductor Manufacturing
Processes" H. M. Oluseyi, March 20, 2002, U.S. Application
#10/101,215, 28 claims.
- "Method of Increasing Selectivity to
Mask When Etching Tungsten or Tungsten Nitride" (Inventors:
H.M. Oluseyi & P. Nallan) Applied Materials, Inc. 2002, U.S.
Application #10/177,890.
- "A High Selectivity and Residue Free
Process for Metal on Thin Dielectric Gate Etch Application"
M. Shen, Y. Du, N. Gani, O. Yauw & H.M. Oluseyi, October
23, 2003, U.S. Application #10/279,320, 24 claims.
NANOTECHNOLOGY PUBLICATIONS
- "Investigation of Etching poly-Si on
a High-k, ZrO2 Dielectric for International Sematech,"
Oluseyi, H. M., Nallan, P., Shen, M., Sematech Project ETCA010,
Applied Materials, Inc., April 2001.
- "Development of a Process for Etching
0.15 0.25 mm W/WN/Poly and W/WN Gates on 2.5 nm SiO2 or
Si3N4," Oluseyi, H. M, Nallan, P., Shen, M., Silicon Etch
Report DPS70097A/B, Applied Materials, Inc., April 2001.
- "Development of an Etch Process for
a 0.15 mm WSix/poly Gate," Oluseyi, H. M., Nallan, P., Chinn,
J., Silicon Etch Applications Laboratory Report DPS70046, Applied
Materials, Inc., November 2000.
- "Development of a Process for Etching
a 0.20 mm W/WN Gate on 2.0 nm SiON," Oluseyi, H. M., Nallan,
P., Chinn, J., Silicon Etch Applications Laboratory Report DPS99201,
Applied Materials, Inc., November 2000.
- "Development of a Highly Selective Process
for Etching 0.12 mm W/WN Gates on 4.5 nm Ta2O5," Oluseyi,
H. M., Nallan, P., Chinn, J., Silicon Etch Applications Laboratory
Report DPS70055, Applied Materials, Inc., August 2000.
- "A Process for Etching a 0.15 mm WSix/poly
Gate with Excellent Control," Oluseyi, H. M., Nallan, P.,
Chinn, J., Silicon Etch Applications Laboratory Report DPS70112,
Applied Materials, Inc., June 2000.
- "Process Development for New Gate Conductors
and High-k Dielectrics for International Sematech,"
Oluseyi, H. M., Nallan, P., Chinn, J., Silicon Etch Laboratory
Report DPS2A016A/B, Applied Materials, Inc., May 2000.
- "In-Situ Diagnostics of PECVD Processes
Using EyeD System," Oluseyi, H.M., Sarfaty, M., Swarts,
D., Acton, D., Agarwal, A., Lymberopolous, D., Applied Materials,
Inc., April 2000.
- "Development of a Process for Etching
Ti/poly Gate Stack," Oluseyi, H. M., Nallan, P., Chinn,
J., Silicon Etch Applications Laboratory Report DPS2B062, Applied
Materials, Inc., March 2000.
- "Process Development for 0.18 mm TiSix
Gate Etching," Oluseyi, H. M., Nallan, P., Chinn, J., Silicon
Etch Applications Laboratory Report DPS2A032, Applied Materials,
Inc., March 2000.
- "Concept and Feasibility of the EyeD
Spectrometer System," Oluseyi, H.M., Sarfaty, M., Agarwal,
A., Applied Materials, Inc., December 1999.
- "Design of a CMP Wafer Cassette Tank
DI Water Fill and Overflow Status Sensor System," Oluseyi,
H.M., Smith, S., Trieu, A., Chemical Mechanical Polishing Division,
Applied Materials, Inc., November 1999.
- "Reconfiguration of CMP Operator Interface
Options Selection Logic and Organization," Oluseyi, H.M.,
Smith, S., Joyal, J., Chemical Mechanical Polishing Division,
Applied Materials, Inc., November 1999.
VISITORS since opening
5/27/1997
