Alfred Phillips, Jr



B.S. 1961 (Loyola); M.S. 1963 (Howard University)

Ph.D. 1969 (Howard University)

: Associate Professor, Electrical and Computer Engineering
, Cornell University


While still a graduate student, Alfred Phillips, Jr worked in the Laboratory for Theoretical Studies at NASA's Goddard Space Flight Center. He spent twenty-three years doing mathematical modeling of transistors and related phenomena at IBM's East Fishkill and Yorktown facilities. Phillips joined Cornell University's School of Electrical Engineering in 1992 after a year as a visiting professor on loan from IBM. He is a member of the Institute of Electrical and Electronics Engineers, the National Society of Black Physicists, and the American Physical Society.

Research Interests

Modeling the diffusion of impurities in semiconductors has been a long-standing interest. A recent effort involves three coupled partial differential equations: one for substitutional impurities, another for vacancies, and a third for interstitial impurities. Initial tests suggest that this model is more accurate than SUPREM IV for boron diffusion in silicon, the only case investigated so far.

Modeling field-effect transistors (FETs) has also been a continuing interest. My early work on FETs dealt with the parasitic bipolar transistor that can manifest itself in an FET. Electron emission from an FET was modeled using enhanced Monte Carlo techniques so that the energetic part of the electron energy distribution could be computed more accurately. A new model, based on two postulates, has been shown to be applicable to all FETs: MOSFETs, JFETs, MESFETs, and MODFETs.

I have an abiding desire to play a part in the creation of a new transistor-like quantum device. I think that optics could be a key part of a viable new device. I have worked at both the vertical or epitaxial aspect of semiconductor lasers and at the horizontal or metallization aspect. A device capable of displacing transistors from their current preeminence may utilize both optics and electronics. The exact nature of such a device remains to be worked out, but I have proposed one possibility and suggested another, which would use a single-electron transistor.

Selected Publications

  1. PhillipsKennedy, D. P., and A. Phillips Jr. 1973. Source drain breakdown in an insulated-gate field-effect transistor. Technical Digest, 1973 International Electron Devices Meeting, pp. 160-63.
  2. Phillips Jr., A., R. R. O'Brien, and R. C. Joy. 1975. IGFET hot electron emission model. Technical Digest, 1975 International Electron Devices Meeting, pp. 39-42.
  3. Phillips Jr., A., and P. J. Price. 1977. Monte Carlo calculations on hot electron energy tails. Applied Physics Letters 30:528-30.
  4. Phillips Jr., A. 1978. Calculations of the effect of emitter compensation on beta and f sub-T of bipolar devoices. IBM Journal of Research and Development 22:687-89.
  5. Das, G., Phillips Jr., A., and W. P. Dumke. 1979. Emitter compensation effect. Technical Digest, 1979 International Electron Devices Meeting, pp. 514-16.
  6. Phillips Jr., A., and J. S. Lew. 1987. A new model for ion migration in silicon [abstract]. Bulletin of the American Physical Society 32:53.
  7. Phillips Jr., A. 1994. A new model for interstitial diffusion in silicon. In Technical digest, HBCU workshop on the physics of materials and materials science, p. 64. Baltimore: Morgan State University.



Phillips Jr., A. 1992. Opto-photo-electric switch. U.S. Patent No. 5,130,528.

Harder, C. S., S. V. Iyer, H. P. Meier, A. Phillips Jr., and A. Behfar-Rad. 1994. Semiconductor ridge waveguide laser with assymmetrical cladding. U.S. Patent No. 5,130,202.

Phillips Jr., A. 1995. Bondable single-metal-level laser arrays of arbitrary spacing. U.S. Patent No. 5,404,372.

Computer Scientists of the African Diaspora

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