Kevin T. Kornegay

birth:

place:

BEE from Pratt Institute (1985); MS (Electrical Engineering and Computer Science) from the University of California at Berkeley (1990)

PhD in Electrical Engineering and Computer Science, University of California at Berkeley (1992)

: Associate Professor, Electrical and Computer Engineering Department, Cornell University

personal or universal URL: http://aims.ece.cornell.edu/kornegay/
email:

From 1983 to 1987, he was employed as a Member of Technical Staff at AT&T Bell Laboratories in Murray Hill, NJ. From 1992 to 1994 he was employed as a Research Staff Member at the IBM Thomas J. Watson Research Center in Yorktown Heights, NY. From August 1994 through December 1997, he was an Assistant Professor in the School of Electrical and Computer Engineering at Purdue University. In January 1998, he joined the faculty in the School of Electrical Engineering at Cornell University where his research interests include MEMS and integrated systems for harsh environments, wireless sensor systems, VLSI design, smart power electronics, and wide bandgap semiconductors. His research is currently funded by the Air Force Office of Scientific Research (AFOSR), Office of Naval Research (ONR), National Science Foundation (NSF), and the Alcoa Foundation.

He has served or currently serves on the program committees of the International Test Conference and the IEEE Computer Society Annual Workshop on VLSI, as well as, on the Editorial Board of the IEEE Design and Test of Computers Magazine. He currently serves on the program committees of the International Symposium on Power Semiconductor Devices and ICs, and the IEEE Industrial Applications Society Meeting. Prof. Kornegay is the recipient of the 1999 National Science Foundation CAREER Award, National Semiconductor Faculty Development Award, and General Motors Faculty Fellowship Award. He was also the 1997 Dr. Martin Luther King, Jr. Visiting Professor in the EECS department at MIT. He is a member of the ETA KAPPA NU, TAU BETA PI, NSBE , and a Senior member of the IEEE. He worksmany African Americans at Cornel.

In 2004, Dr. Kornegay was selected as one of the 50 Most Important Blacks in Research Science.

RESEARCH

Kevin Kornegay's research interests include big bandgap semiconductor devices, smart power electronics and Power Electronic Building Blocks (PEBBs), wireless MEMS and integrated electronic for harsh environments, and VLSI design and CAD for VLSI. Kornegay won an NSF CAREER award from the Directorate of Engineering in 2000.

The Faculty Early Career Development (CAREER) award is NSF's highest honor for new faculty, and fosters integration of research and education. CAREER awards support exceptionally promising college and university junior faculty who are committed to the integration of research and education. Career awardees become eligible to receive the White House's highest honor for new scientists and engineers, the Presidential Early Career Awards for Scientists and Engineers (PECASE). The CAREER award combines in a single program the support of research and education of the highest quality and in the broadest sense. This program emphasizes the importance the Foundation places on the early development of academic careers dedicated to stimulating the discovery process in which the excitement of research is enhanced by inspired teaching and enthusiastic learning.
The CAREER program "rewards academic talent in all areas supported by NSF's research and education programs in science, mathematics, engineering, and technology. With the establishment of the award in 1995, it supplanted other NSF award programs with similar goals."

Selected Publications

  1. M. Lam and K.T. Kornegay, "Recent Progress of Submicron CMOS in 6H-SiC for Smart Power Applications," Special Issue of the IEEE Transactions on Electron Devices on Silicon Carbide Electronic Devices, vol. 46, no. 3, pp. 546-554, March 1999.
  2. J. Chen and K.T. Kornegay,"A Silicon Carbide CMOS Intelligent Gate Driver Circuit with Stable Operation over a Wide Temperature Range," IEEE Journal of Solid State Circuits, vol. 34, no. 2, pp. 192-204, February 1999.
  3. J. Chen and K.T. Kornegay,"Design of a Process Variation Tolerant CMOS OPAMP in 6H-SiC Technology for High Temperature Operation," IEEE Transactions on Circuits and Systems - Part I, vol. 45, no. 11, pp. 1159-1171, November 1998.
  4. J. Chen and K.T. Kornegay,"A Silicon Carbide CMOS Intelligent Gate Driver Circuit," IEEE Industrial Applications Society Meeting Digest, October 1998.
  5. J. Chen and K.T. Kornegay,"A Constant Input Transconductance and Rail-to-Rail Input/Output Swing SiC CMOS OPAMP," Proc. Int'l Symposium on Circuits and Systems, June 1998.
  6. M.P. Lam, M.K. Das, J.N. Pan, K.T. Kornegay, J.A. Cooper, Jr., and M.R. Melloch,"Effects of Nitrogen Implant Activation on the SiC/SiO2 Interface of 6H-SiC Self-Aligned NMOSFETs," IEEE Transactions on Electron Devices, vol. 45, no. 2, pp. 565-567, February 1998.
  7. S. Ryu, K.T. Kornegay, J.A. Cooper, Jr., and M.R. Melloch," Digital CMOS ICs in 6H-SiC Operating On a 5V Power Supply," IEEE Transactions on Electron Devices, vol. 45, no. 1, pp. 45-53, January 1998.
  8. S. Ryu, K.T. Kornegay, J.A. Cooper, Jr., and M.R. Melloch," Monolithic CMOS Digital Integrated Circuits in 6H-SiC Using an Implanted P-Well Process," IEEE Electron Device Letters, Vol. 18, No. 5, pp. 194 - 196, May 1997.
  9. M.P. Lam, K.T. Kornegay, J.A. Cooper, Jr., and M.R. Melloch, "Planar 6H-SiC MESFET's with Vanadium Implanted Channel Termination," IEEE Transactions on Electron Devices, vol. 44, no. 5, pp. 907-970, May 1997.
  10. J. Chen and K.T. Kornegay, "A Class AB SiC CMOS Power OPAMP With Stable Voltage Gain Over A Wide Temperature Range," IEE Proceedings Circuits, Devices, and Systems , vol. 144, pp. 22-28, February 1997.
  11. S. Ryu and K.T. Kornegay, "Design and Fabrication of Depletion Load NMOS Integrated Circuits in 6H-SiC," presented at the 5th ICSCRM conference , Kyoto, Japan, September 1995.

reference: Kornegay's web page

 

Computer Scientists of the African Diaspora

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