Ilesanmi Adesida

birth: ; place:

B.S. electrical engineering (1974) the University of California, Berkeley; M.S. electrical engineering (1975) the University of California, Berkeley

Ph.D. electrical engineering (1979) University of California, Berkeley

professor in the U of I Department of Electrical and Computer Engineering, an affiliate faculty member in the Beckman Institute Nanoelectronics and Biophotonics group, and the director of the U of I Microelectronics laboratory


From 1979 to 1984, Dr. Adesida worked in various capacities at what is now known as the Cornell Nanofabrication Facility and the School of Electrical Engineering, Cornell University, Ithaca, NY. He was the Head of the Electrical Engineering Department at Tafawa Balewa University, Bauchi, Nigeria, from 1985 to 1987. He then joined the University of Illinois at Urbana-Champaign, where he is currently the Donald Biggar Willet Professor of Engineering, Professor of Electrical and Computer Engineering, Professor of Materials Science and Engineering, the Director of the Micro & Nanotechnology Laboratory, and the Director of the Center for Nanoscale Science and Technology. He has also previously served as the Associate Director for Education of the NSF Engineering Research Center for Compound Semiconductor Microelectronics from 1990 to 1997. In collaboration with colleagues, his efforts led to the award of the NSF Nanoscale Center for Chemical-Electrical-Mechanical-Manufacturing Systems to the University of Illinois in 2003. His research interests include nanofabrication processes and ultra-high-speed optoelectronics. He has extensive experience in the development of novel processes for wide bandgap materials such as silicon carbide and gallium nitride. He has also worked on ultra-high-speed photodetectors and photoreceivers in various materials systems. Professor Adesida has chaired many international conferences including serving as the Program and General Chair of the Electronic Materials Conference from 2000 to 2003. He is a Fellow of the Institute of Electrical and Electronic Engineers (IEEE), the American Association for the Advancement of Science (AAAS), and the American Vacuum Society (AVS). He is serving as the President-Elect of the IEEE Electron Device Society in 2004 and 2005.

Honors: Associate, UIUC Center for Advanced Study; Vice-chair, Electronic Materials Committee; Fellow, IEEE (1999); Oakley-Kunde Award for Excellence in Undergraduate Education; University Scholar; Best Paper Award, International Conference on Micro- and Nano-Engineering (1996); Fellow, IEEE; IEEE EDS Distinguished Lecturer; UIUC College of Engineering's List for Advising Excellence; Member, Bohmische Society; EMSA Presidential Student Award.


Professor Adesida's fields of interest are advanced materials processing and high speed semiconductor optoelectronic devices and circuits. He conducts research on nanostructures, semiconductor processing, and devices. He has collaborated with Professor P. Bohn in fabricating nanometer scale gold probes to detect single molecules via resistively-monitored thiol chemisorption. His other activities center on studying dislocations in GaN using photoelectrochemical etching and investigating ultra-high speed field-effect transistors in various hererostructures such as AlGaN/GaN, GaAs/InGaAs, and SiGe/Si.

He has 253 journal papers of which many are in the Journal of Applied Physics and Applied Physics Letters; 186 conferences papers, 23 supervised Ph.D students...More on his publications list and at: and

Recent, Representative Publications

Farid, K. A., Zhou, L., Ping, A. T., and Adesida, I. (1999), "ICP-RIE Etching of AlxGa1-xN for Applications in Laser Facet Formation," Journal of Vacuum Science and Technology, B17, pp. 2750-2754.

Farid, K. A. and Adesida, I. (1999), "High Rate Etching of SiC Using Inductively Coupled Plasma Reactive Ion Etching in SF6-based Gas Mixtures," Applied Physics Letters, 75, pp. 2268-2270.

Dumka, D. C., Cueva, G., Adesida, I., Hier, H. and Aina, O. A. (1999), "Doped Multichannel AlAs0.56Sb0.44/In0.53Ga0.47As Field Effect Transistors," Electronics Letters, 35, pp. 1673-1674.

Adesida, I., Mahajan, A., Cueva, G., and Fay, P. (1999), "Novel HEMT Processing Technologies and Their Circuit Applications," Solid State Electronics, 43, pp. 1333-1338.

Ping, A. T., Selvanathan, D., Youtsey, C., Adesida, I., Piner, E., and Redwing, J. (1999), "Gate Recessing of GaN MESFETs Using Photoelectrochemical Wet Etching," Electronics Letters, 35, pp. 2140-2141.

Youtsey, C., Romano, L. T., Molnar, R. J., and Adesida, I. (1999), "Rapid Evaluation of Dislocation Densities in n-type GaN Films Using Photoenhanced Etching," Applied Physics Letters, 74, pp. 3537-3539.



 references: R. Guibinga;;

Computer Scientists of the African Diaspora

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